Dokument: Direct Galvanic Metallization of insulating Substrates: Mechanismus and Applications for Microstructuring

Titel:Direct Galvanic Metallization of insulating Substrates: Mechanismus and Applications for Microstructuring
URL für Lesezeichen:https://docserv.uni-duesseldorf.de/servlets/DocumentServlet?id=2544
URN (NBN):urn:nbn:de:hbz:061-20030623-000544-0
Kollektion:Dissertationen
Sprache:Englisch
Dokumententyp:Wissenschaftliche Abschlussarbeiten » Dissertation
Medientyp:Text
Autor: Mai, Thanh Tung [Autor]
Dateien:
[Dateien anzeigen]Adobe PDF
[Details]5,59 MB in einer Datei
[ZIP-Datei erzeugen]
Dateien vom 09.02.2007 / geändert 09.02.2007
Beitragende:Prof. Dr. Schultze, Joachim Walter [Gutachter]
Prof. Dr. Staikov, Georgi [Gutachter]
Prof. Dr. Schierbaum, Klaus [Gutachter]
Stichwörter:Direktmetallisierung, Kunststoffen, PLATO, Kobalt Sulfid, MikrostrukturierungDirect Metallization, Polymers, PLATO, Cobalt sulphide,
Dewey Dezimal-Klassifikation:500 Naturwissenschaften und Mathematik » 540 Chemie
Beschreibung:In the dissertation, the volunteering work on Direct Galvanic Metallization of insulating polymers using metal sulphide through the so-called PLATO technique is reported. Goals of the work are: (i) study mechanisms of the processes, including pre-treatment and metal deposition and (ii) applications of the technique for microstructuring.
The mechanisms of the pre-treatment, which consists of etching and activation, was studied on four substrates: Acrylonitrylbutadiene (ABS), Poly-Ether-Ether-Ketone (PEEK), Polyimide (PI) and Polycarbonate (PC). AFM, XPS and contact angle measurements show that the chromic acid etching of polymer surfaces leads to an increase of the surface energy and hydrophicility of polymer surfaces due to both, the surface roughening and the formation of -COOH and/or -COH groups. However, the increases of roughness and hydrophilicity of different polymers are different. Crucial for subsequent activation and metallization is the increase of the surface roughness, which increases significantly the degree of activation with CoS(ß). XPS measurements on activated surfaces show that CoS(ß) covers only a part of surface (coverage q<100%) and q increases with increasing number of activation cycle.
Mechanisms of metal deposition were studied by investigation electrochemistry of CoS(ß) and kinetics of the deposition process. Results on electrochemistry of CoS(ß) show that the reduction of CoS(ß) at E<-0.25V occurs preferentially on surface of the CoS(ß) cluster. This reduction catalyzes the Ni deposition process onto the CoS(ß) clusters. Propagation behaviour, surface morphology, conductivity and thickness of a deposited metal layer are characterized using microscopy, AFM, four-point conductivity and XPS-sputter measurements. The growth of Ni layer during deposition process is simulated using dimensionless analysis. Influences of potential (E), CoS(ß) coverage (q) and Ni concentration (CNi) on the deposition process were investigated. Results show that metal deposition takes place with the fast lateral propagations of two layers: primary layer and secondary layer. The primary layer is formed by deposition on CoS(ß) cluster and induced by the reduction of the CoS(ß). The primary layer is a set of hemispheres, which consist of cores (Co0, CoS(ß)) covered by deposited Ni. The secondary Ni layer is formed by mechanism of metal deposition on a low conductivity primary layer. Due to the different mechanisms, the two layer have different characteristics: (topography, conductivity, thickness). Both processes, formations of the primary- and the secondary layers, and thereby their propagation rates (Vx´ and Vx´´), are influenced by potential (E), CoS(ß) coverage (q) and Ni concentration (CNi).
The applications of the PLATO technique with different substrates and metals (alloys) are studied. For microstructured metallization, three routines are proposed and the results are presented.
Lizenz:In Copyright
Urheberrechtsschutz
Fachbereich / Einrichtung:Mathematisch- Naturwissenschaftliche Fakultät » WE Chemie
Dokument erstellt am:23.06.2003
Dateien geändert am:12.02.2007
Promotionsantrag am:18.06.2003
Datum der Promotion:18.06.2003
english
Benutzer
Status: Gast
Aktionen